Pure-Ge Base Heterostructure Bipolar Transistor

Along with Harsha, Oliver, and Prof. Mil’shtein, I co-authored a manuscript on “Non-Graded Base Si/Ge Heterojunction Transistor“. The objective of this design was to utilize the carrier mobility advantages of a pure-Ge base transistor over Si or SiGe alternatives. Lattice matching of Si and Ge materials added an additional complexity to the model. I was assisting with the device modelling and CAD simulation in SILVACO.

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